FDN86265P mosfet equivalent, mosfet.
General Description
* Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A
* Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A
* Very low RDS-on mid voltage P-chann.
as well as load switch applications
* 100% UIL tested
* RoHS Compliant
This P-Channel MOSFET is produced using .
* Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -0.8 A
* Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.7 A
* Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
* This product is optimised for fast switching applica.
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